@ARTICLE{
author={Rosic Maja B,Simic Mirjana I,Lukic Petar M},
year={2016},
title={TDOA approach for target localization based on improved genetic algorithm},
journal={2016 24TH TELECOMMUNICATIONS FORUM (TELFOR)},
volume={},
number={},
pages={181-184},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Lukic Petar M,Sasic Rajko M},
year={2014},
title={Modeling of carriers mobility impact on CNT FIET current-voltage characteristics},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={16},
number={11-12},
pages={1418-1424},
document_type={Article},
} 

@ARTICLE{
author={Ostojic Stanko M,Sasic Rajko M,Lukic Petar M,Abood Imhimmad},
year={2014},
title={Surrounding gate long channel nanowire MOSFET modelling-extended analysis},
journal={PHYSICA SCRIPTA},
volume={89},
number={11},
pages={-},
document_type={Article; Proceedings Paper},
} 

@ARTICLE{
author={Alkoash Abed Alkhem,Sasic Rajko M,Lukic Petar M,Ostojic Stanko M},
year={2014},
title={4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis},
journal={PHYSICA SCRIPTA},
volume={89},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Abood Imhimmad,Sasic Rajko M,Ostojic Stanko M,Lukic Petar M},
year={2013},
title={Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={52},
number={9},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Abood Imhimmad,Lukic Petar M,Sasic Rajko M,Alkoash Abed Alkhem,Ostojic Stanko M},
year={2013},
title={4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance},
journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS},
volume={7},
number={5-6},
pages={329-333},
document_type={Article},
} 

@ARTICLE{
author={Zunjic Aleksandar G,Milanovic Dragan D,Milanovic Dragan Lj,Misita Mirjana Z,Lukic Petar M},
year={2012},
title={Development of a tool for assessment of VDT workplaces - A case study},
journal={INTERNATIONAL JOURNAL OF INDUSTRIAL ERGONOMICS},
volume={42},
number={6},
pages={581-591},
document_type={Article},
} 

@ARTICLE{
author={Vasic Dusan B,Lukic Petar M,Lukic Vladan M,Sasic Rajko M},
year={2012},
title={Analytical model of CNT FET current-voltage characteristics},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={14},
number={1-2},
pages={176-182},
document_type={Article},
} 

@ARTICLE{
author={Lukic Petar M,Sasic Rajko M,Loncar Boris B,Zunjic Aleksandar G},
year={2011},
title={Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics},
journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS},
volume={5},
number={5-6},
pages={551-554},
document_type={Article},
} 

@ARTICLE{
author={Alkoash Abedalkhem,Sasic Rajko M,Ostojic Stanko M,Lukic Petar M},
year={2011},
title={An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs},
journal={JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE},
volume={8},
number={1},
pages={47-50},
document_type={Article},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ostojic Stanko M,Alkoash Abedalkhem},
year={2010},
title={The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={12},
number={5},
pages={1161-1164},
document_type={Article},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ostojic Stanko M,Ramovic Rifat M},
year={2008},
title={Surface carriers' concentration dynamics caused by a small alternating applied voltage},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={10},
number={12},
pages={3430-3435},
document_type={Article},
} 

@ARTICLE{
author={Ramovic Rifat M,Lukic Petar M,Sasic Rajko M,Ostojic Stanko M},
year={2008},
title={Analytical model of a Si TFT with cylindrical source and drain},
journal={2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS},
volume={},
number={},
pages={193-196},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M},
year={2007},
title={Conduction mechanism based model of organic field effect transistor structure},
journal={RESEARCH TRENDS IN CONTEMPORARY MATERIALS SCIENCE},
volume={555},
number={},
pages={125-+},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2007},
title={Modeling and investigation of SiGe based MOSFET structure transport characteristics},
journal={RESEARCH TRENDS IN CONTEMPORARY MATERIALS SCIENCE},
volume={555},
number={},
pages={101-+},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ramovic Rifat M,Ostojic Stanko M},
year={2007},
title={Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={9},
number={9},
pages={2703-2708},
document_type={Article},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M},
year={2007},
title={Conduction mechanism based model of organic field effect transistor structure},
journal={Research Trends in Contemporary Materials Science},
volume={555},
number={},
pages={125-130},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2007},
title={Modeling and investigation of SiGe based MOSFET structure transport characteristics},
journal={Research Trends in Contemporary Materials Science},
volume={555},
number={},
pages={101-106},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Ramovic Rifat M,Sasic Rajko M,Lukic Petar M},
year={2006},
title={Novel approach to the investigation of carriers' concentration in various semiconductor structures},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={8},
number={4},
pages={1418-1423},
document_type={Article},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2006},
title={A new threshold voltage analytical model of strained Si/SiGe MOSFET},
journal={2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings},
volume={},
number={},
pages={505-508},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ramovic Rifat M},
year={2006},
title={New analytical HFET I-V characteristics model},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={8},
number={1},
pages={324-328},
document_type={Article},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2005},
title={Modeling and optimization of reliability of one redundant computer network},
journal={Eurocon 2005: The International Conference on Computer as a Tool, Vol 1 and 2 , Proceedings},
volume={},
number={},
pages={1762-1765},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2005},
title={HEMT carrier mobility analytical model},
journal={CURRENT RESEARCH IN ADVANCED MATERIALS AND PROCESSES},
volume={494},
number={},
pages={43-48},
document_type={Article},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2005},
title={Analytical model of electric field in heterojunction region of HFET structure},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={7},
number={3},
pages={1611-1617},
document_type={Article},
} 

@ARTICLE{
author={Ramovic Rifat M,Krijestorac S,Lukic Petar M},
year={2004},
title={Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution},
journal={2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND  2},
volume={},
number={},
pages={307-310},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Ramovic Rifat M,Lukic Petar M},
year={2004},
title={Surface density analytical model of two-dimensional electron gas in HEMT structures},
journal={PROGRESS IN ADVANCED MATERIALS AND PROCESSES},
volume={453-454},
number={},
pages={27-32},
document_type={Article},
}