Jankovic Nebojsa D,Faramehr Soroush,Igic Petar (2022) A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT, JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 21, br. 1, str. 191-196 (Article) 

Faramehr Soroush,Jankovic Nebojsa D,Igic Petar (2019) Gan Current Transducers for Harsh Environments, 2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), vol. , br. , str. 1985-1988 (Proceedings Paper) 

Faramehr Soroush,Poluri Nagaditya,Igic Petar,Jankovic Nebojsa D,De Souza Maria Merlyne (2019) Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, br. 10, str. 4367-4372 (Article) 

Faramehr Soroush,Jankovic Nebojsa D,Igic Petar (2018) Analysis of GaN MagHEMTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 33, br. 9, str. - (Article) 

Igic Petar,Jankovic Nebojsa D,Evans Jon,Elwin Matthew,Batcup Stephen,Faramehr Soroush (2018) Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology, IEEE ELECTRON DEVICE LETTERS, vol. 39, br. 5, str. 746-748 (Article) 

Igic Petar,Kryvchenkova Olga,Faramehr Soroush,Batcup Steve,Jankovic Nebojsa D (2017) High Sensitivity Magnetic Sensors Compatible with Bulk Silicon and SOI IC Technology, 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), vol. , br. , str. 55-59 (Proceedings Paper) 

Jankovic Nebojsa D,Kryvchenkova Olga,Batcup Steve,Igic Petar (2017) High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology, IEEE ELECTRON DEVICE LETTERS, vol. 38, br. 6, str. 810-813 (Article) 

Jankovic Nebojsa D,Young Chadwin D (2016) Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs, MICROELECTRONICS RELIABILITY, vol. 59, br. , str. 26-29 (Article) 

Marjanovic Milos B,Dankovic Danijel M,Davidovic Vojkan S,Prijic Aneta P,Stojadinovic Ninoslav D,Prijic Zoran D,Jankovic Nebojsa D (2015) Modeling and PSPICE Simulation of Radiation Stress Influence on Threshold Voltage Shifts in P-Channel Power VDMOS Transistors, RAD 2015: THE THIRD INTERNATIONAL CONFERENCE ON RADIATION AND APPLICATIONS IN VARIOUS FIELDS OF RESEARCH, vol. , br. , str. 405-408 (Proceedings Paper) 

Pesic-Brdjanin Tatjana,Jankovic Nebojsa D (2015) Sub-sircuit model of fully-depleted double-gate FinFET including the effects of oxide and interface trapped charge, IEEE EUROCON 2015 - INTERNATIONAL CONFERENCE ON COMPUTER AS A TOOL (EUROCON), vol. , br. , str. 273-276 (Proceedings Paper) 

Jankovic Nebojsa D,Pesic-Brdjanin Tatjana (2015) Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs, JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 14, br. 3, str. 844-851 (Article) 

Jankovic Nebojsa D (2012) Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco, MICROELECTRONICS RELIABILITY, vol. 52, br. 11, str. 2537-2541 (Article) 

Jankovic Nebojsa D,Pantic Dragan S,Batcup Steve,Igic Petar (2012) A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate, APPLIED PHYSICS LETTERS, vol. 100, br. 26, str. - (Article) 

Jankovic Nebojsa D,Brajovic V (2011) V-th compensated AMOLED pixel employing dual-gate TFT driver, ELECTRONICS LETTERS, vol. 47, br. 7, str. 456-U122 (Article) 

Jankovic Nebojsa D,Igic Petar,Sakurai Naoki (2010) Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations, SOLID-STATE ELECTRONICS, vol. 54, br. 3, str. 268-274 (Article) 

Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar (2009) An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor, INTERNATIONAL JOURNAL OF ELECTRONICS, vol. 96, br. 7, str. 767-779 (Article) 

Jankovic Nebojsa D (2009) Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology, SENSORS AND MATERIALS, vol. 21, br. 3, str. 167-177 (Article) 

Jankovic Nebojsa D,Pesic Tatjana V,Pantic Dragan S (2007) Dynamic MAGFET model for sensor simulations, IET CIRCUITS DEVICES & SYSTEMS, vol. 1, br. 4, str. 270-274 (Article) 

Jankovic Nebojsa D,Ueta Takashi,Hamada Kimimori,Nishijima Toshifumi,Igic Petar (2007) Unified approach in electro-thermal modelling of IGBTs and power PiN diodes, PROCEEDINGS OF THE 19TH  INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, vol. , br. , str. 165-168 (Proceedings Paper) 

Jankovic Nebojsa D,Pesic Tatjana V,Igic Petar (2007) All injection level power PiN diode model including temperature dependence, SOLID-STATE ELECTRONICS, vol. 51, br. 5, str. 719-725 (Article) 

Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar (2006) An advance physics-based sub-circuit model of IGBT, 2006 IEEE International Symposium on Industrial Electronics, Vols 1-7, vol. , br. , str. 447-452 (Proceedings Paper) 

Jankovic Nebojsa D,Pesic Tatjana V,O'Neill AG (2006) Modelling of strained-Si/SiGe NMOS transistors including DC self-heating, SOLID-STATE ELECTRONICS, vol. 50, br. 3, str. 496-499 (Article) 

Pesic Tatjana V,Jankovic Nebojsa D (2005) A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, vol. 24, br. 10, str. 1550-1561 (Article) 

Jankovic Nebojsa D,Pesic Tatjana V (2005) Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET, SOLID-STATE ELECTRONICS, vol. 49, br. 7, str. 1086-1089 (Article) 

Jankovic Nebojsa D,Armstrong GA (2004) Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers, MICROELECTRONICS JOURNAL, vol. 35, br. 8, str. 647-653 (Article) 

Pesic Tatjana V,Jankovic Nebojsa D (2004) Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis, 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND  2, vol. , br. , str. 261-264 (Proceedings Paper) 

Jankovic Nebojsa D,Horsfall AB (2003) Self-heating effects in virtual substrate SiGeHBTs, TELSIKS 2003: 6TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICE, VOLS 1 AND 2, PROCEEDINGS OF PAPERS, vol. , br. , str. 573-576 (Proceedings Paper) 

Jankovic Nebojsa D,O'Neill AG (2003) Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 18, br. 9, str. 901-906 (Article) 

Kwa KSK,Chattopadhyay S,Jankovic Nebojsa D,Olsen SH,Driscoll LS,O'Neill AG (2003) A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 18, br. 2, str. 82-87 (Article) 

Pesic Tatjana V,Jankovic Nebojsa D,Huebers Heinz-Wilhelm (2002) Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation, ASDAM '02, CONFERENCE PROCEEDINGS, vol. , br. , str. 187-190 (Proceedings Paper) 

Jankovic Nebojsa D,Pesic Tatjana V,Huebers Heinz-Wilhelm (2002) 1D physically based non-quasi-static analog behavioral BJT model for SPICE, 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, vol. , br. , str. 463-468 (Proceedings Paper) 

Pesic Tatjana V,Jankovic Nebojsa D (2001) An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors, MICROELECTRONICS JOURNAL, vol. 32, br. 9, str. 713-718 (Article) 

Karamarkovic Jugoslav P,Pesic Tatjana V,Jankovic Nebojsa D (2000) An analytical approach to Kirk effect modelling, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, vol. , br. , str. 311-314 (Proceedings Paper) 

Karamarkovic Jugoslav P,Jankovic Nebojsa D (2000) Modification of drift-diffusion model for short base transport, ELECTRONICS LETTERS, vol. 36, br. 24, str. 2047-2048 (Article)