@ARTICLE{
author={Jankovic Nebojsa D,Faramehr Soroush,Igic Petar},
year={2022},
title={A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT},
journal={JOURNAL OF COMPUTATIONAL ELECTRONICS},
volume={21},
number={1},
pages={191-196},
document_type={Article},
} 

@ARTICLE{
author={Faramehr Soroush,Poluri Nagaditya,Igic Petar,Jankovic Nebojsa D,De Souza Maria Merlyne},
year={2019},
title={Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing},
journal={IEEE TRANSACTIONS ON ELECTRON DEVICES},
volume={66},
number={10},
pages={4367-4372},
document_type={Article},
} 

@ARTICLE{
author={Faramehr Soroush,Jankovic Nebojsa D,Igic Petar},
year={2018},
title={Analysis of GaN MagHEMTs},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={33},
number={9},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Igic Petar,Jankovic Nebojsa D,Evans Jon,Elwin Matthew,Batcup Stephen,Faramehr Soroush},
year={2018},
title={Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology},
journal={IEEE ELECTRON DEVICE LETTERS},
volume={39},
number={5},
pages={746-748},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Kryvchenkova Olga,Batcup Steve,Igic Petar},
year={2017},
title={High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology},
journal={IEEE ELECTRON DEVICE LETTERS},
volume={38},
number={6},
pages={810-813},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Young Chadwin D},
year={2016},
title={Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={59},
number={},
pages={26-29},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic-Brdjanin Tatjana},
year={2015},
title={Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs},
journal={JOURNAL OF COMPUTATIONAL ELECTRONICS},
volume={14},
number={3},
pages={844-851},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D},
year={2012},
title={Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco},
journal={MICROELECTRONICS RELIABILITY},
volume={52},
number={11},
pages={2537-2541},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pantic Dragan S,Batcup Steve,Igic Petar},
year={2012},
title={A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate},
journal={APPLIED PHYSICS LETTERS},
volume={100},
number={26},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Brajovic V},
year={2011},
title={V-th compensated AMOLED pixel employing dual-gate TFT driver},
journal={ELECTRONICS LETTERS},
volume={47},
number={7},
pages={456-U122},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Igic Petar,Sakurai Naoki},
year={2010},
title={Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations},
journal={SOLID-STATE ELECTRONICS},
volume={54},
number={3},
pages={268-274},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar},
year={2009},
title={An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor},
journal={INTERNATIONAL JOURNAL OF ELECTRONICS},
volume={96},
number={7},
pages={767-779},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D},
year={2009},
title={Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology},
journal={SENSORS AND MATERIALS},
volume={21},
number={3},
pages={167-177},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Pantic Dragan S},
year={2007},
title={Dynamic MAGFET model for sensor simulations},
journal={IET CIRCUITS DEVICES & SYSTEMS},
volume={1},
number={4},
pages={270-274},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Igic Petar},
year={2007},
title={All injection level power PiN diode model including temperature dependence},
journal={SOLID-STATE ELECTRONICS},
volume={51},
number={5},
pages={719-725},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,O'Neill AG},
year={2006},
title={Modelling of strained-Si/SiGe NMOS transistors including DC self-heating},
journal={SOLID-STATE ELECTRONICS},
volume={50},
number={3},
pages={496-499},
document_type={Article},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2005},
title={A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line},
journal={IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS},
volume={24},
number={10},
pages={1550-1561},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V},
year={2005},
title={Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET},
journal={SOLID-STATE ELECTRONICS},
volume={49},
number={7},
pages={1086-1089},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Armstrong GA},
year={2004},
title={Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers},
journal={MICROELECTRONICS JOURNAL},
volume={35},
number={8},
pages={647-653},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,O'Neill AG},
year={2003},
title={Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={18},
number={9},
pages={901-906},
document_type={Article},
} 

@ARTICLE{
author={Kwa KSK,Chattopadhyay S,Jankovic Nebojsa D,Olsen SH,Driscoll LS,O'Neill AG},
year={2003},
title={A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={18},
number={2},
pages={82-87},
document_type={Article},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2001},
title={An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors},
journal={MICROELECTRONICS JOURNAL},
volume={32},
number={9},
pages={713-718},
document_type={Article},
} 

@ARTICLE{
author={Karamarkovic Jugoslav P,Jankovic Nebojsa D},
year={2000},
title={Modification of drift-diffusion model for short base transport},
journal={ELECTRONICS LETTERS},
volume={36},
number={24},
pages={2047-2048},
document_type={Article},
}