Andjelkovic Marko,Simevski Aleksandar,Chen Junchao,Schrape Oliver,Stamenkovic Zoran,Krstic Milos D,Ilic Stefan D,Ristic Goran S,Jaksic Aleksandar B,Vasovic Nikola,Duane Russell,Palma Alberto J,Lallena Antonio M,Carvajal Miguel Angel (2022) A Design Concept for Radiation Hardened RADFET Readout System for Space Applications, MICROPROCESSORS AND MICROSYSTEMS, vol. 90, br. , str. - (Article) 

Ristic Goran S,Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Lalena Antonio M,Krstic Milos D,Jaksic Aleksandar B (2022) Sensitivity and fading of irradiated RADFETs with different gate voltages, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol. 1029, br. , str. - (Article) 

Ristic Goran S,Ilic Stefan D,Duane Russell,Andjelkovic Marko S,Palma Alberto J,Lallena Antonio M,Krstic Milos D,Stankovic Srboljub J,Jaksic Aleksandar B (2021) Radiation sensitive MOSFETs irradiated with various positive gate biases, JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES, vol. 14, br. 1, str. 353-357 (Article) 

Ristic Goran S,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Jaksic Aleksandar B (2021) Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm, SENSORS AND MATERIALS, vol. 33, br. 6, str. 2109-2116 (Article) 

Ristic Goran S,Andjelkovic Marko S,Jaksic Aleksandar B (2015) The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses, APPLIED RADIATION AND ISOTOPES, vol. 102, br. , str. 29-34 (Article) 

Andjelkovic Marko S,Ristic Goran S,Jaksic Aleksandar B (2015) Using RADFET for the real-time measurement of gamma radiation dose rate, MEASUREMENT SCIENCE & TECHNOLOGY, vol. 26, br. 2, str. - (Article) 

Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B (2013) Response of pMOS dosemeters on gamma-ray irradiation during its re-use, RADIATION PROTECTION DOSIMETRY, vol. 155, br. 4, str. 394-403 (Article) 

Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B,Stankovic Koviljka Dj,Markovic Slavoljub A (2012) Successive Gamma-Ray Irradiation and Corresponding Post-Irradiation Annealing of Pmos Dosimeters, NUCLEAR TECHNOLOGY & RADIATION PROTECTION, vol. 27, br. 4, str. 341-345 (Article) 

Ristic Goran S,Vasovic Nikola D,Jaksic Aleksandar B (2012) The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs, JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 45, br. 30, str. - (Article) 

Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B (2012) Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature, SENSORS AND ACTUATORS A-PHYSICAL, vol. 174, br. , str. 85-90 (Article) 

Ristic Goran S,Vasovic Nikola D,Kovacevic Milojko S,Jaksic Aleksandar B (2011) The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si), NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 269, br. 23, str. 2703-2708 (Article) 

Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B (2011) Radiation-sensitive Field Effect Transistor Response to Gamma-ray Irradiation, NUCLEAR TECHNOLOGY & RADIATION PROTECTION, vol. 26, br. 1, str. 25-31 (Article) 

Aleksic Sanja M,Jaksic Aleksandar B,Pejovic Momcilo M (2008) Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs, SOLID-STATE ELECTRONICS, vol. 52, br. 8, str. 1197-1201 (Article) 

Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B (2007) Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress, JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 353, br. 2, str. 170-179 (Article) 

Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B (2006) Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing, APPLIED SURFACE SCIENCE, vol. 252, br. 8, str. 3023-3032 (Article) 

Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B (2005) Fowler-Nordheim high electric field stress of power VDMOSFETs, SOLID-STATE ELECTRONICS, vol. 49, br. 7, str. 1140-1152 (Article) 

Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B (2003) Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs, APPLIED SURFACE SCIENCE, vol. 220, br. 1-4, str. 181-185 (Article) 

Jaksic Aleksandar B,Ristic Goran S,Pejovic Momcilo M,Mohammadzadeh A,Sudre C,Lane W (2002) Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 49, br. 3, str. 1356-1363 (Article) 

Jaksic Aleksandar B,Pejovic Momcilo M,Ristic Goran S (2000) Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments, APPLIED PHYSICS LETTERS, vol. 77, br. 25, str. 4220-4222 (Article) 

Jaksic Aleksandar B,Pejovic Momcilo M,Ristic Goran S (2000) Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 47, br. 3, str. 659-666 (Article) 

Jaksic Aleksandar B,Ristic Goran S,Pejovic Momcilo M (2000) New experimental evidence of latent interface-trap buildup in power VDMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 47, br. 3, str. 580-586 (Article) 

Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B (2000) Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors, JOURNAL OF APPLIED PHYSICS, vol. 87, br. 7, str. 3468-3477 (Article)