@ARTICLE{
author={Andjelkovic Marko,Simevski Aleksandar,Chen Junchao,Schrape Oliver,Stamenkovic Zoran,Krstic Milos D,Ilic Stefan D,Ristic Goran S,Jaksic Aleksandar B,Vasovic Nikola,Duane Russell,Palma Alberto J,Lallena Antonio M,Carvajal Miguel Angel},
year={2022},
title={A Design Concept for Radiation Hardened RADFET Readout System for Space Applications},
journal={MICROPROCESSORS AND MICROSYSTEMS},
volume={90},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Lalena Antonio M,Krstic Milos D,Jaksic Aleksandar B},
year={2022},
title={Sensitivity and fading of irradiated RADFETs with different gate voltages},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT},
volume={1029},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Duane Russell,Jaksic Aleksandar B},
year={2022},
title={Fading of pMOS dosimeters over a long period of time},
journal={MICRO & NANO LETTERS},
volume={17},
number={7},
pages={155-158},
document_type={Letter},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Duane Russell,Andjelkovic Marko S,Palma Alberto J,Lallena Antonio M,Krstic Milos D,Stankovic Srboljub J,Jaksic Aleksandar B},
year={2021},
title={Radiation sensitive MOSFETs irradiated with various positive gate biases},
journal={JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES},
volume={14},
number={1},
pages={353-357},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Jaksic Aleksandar B},
year={2021},
title={Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm},
journal={SENSORS AND MATERIALS},
volume={33},
number={6},
pages={2109-2116},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Simevski Aleksandar,Chen Junchao,Schrape Oliver,Stamenkovic Zoran,Krstic Milos D,Ilic Stefan D,Spahic Luka,Kostic Laza,Ristic Goran S,Jaksic Aleksandar B,Palma Alberto J,Lallena Antonio M,Carvajal Miguel Angel},
year={2020},
title={Design of Radiation Hardened RADFET Readout System for Space Applications},
journal={2020 23RD EUROMICRO CONFERENCE ON DIGITAL SYSTEM DESIGN (DSD 2020)},
volume={},
number={},
pages={484-488},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Jaksic Aleksandar B},
year={2015},
title={The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses},
journal={APPLIED RADIATION AND ISOTOPES},
volume={102},
number={},
pages={29-34},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S,Jaksic Aleksandar B},
year={2015},
title={Using RADFET for the real-time measurement of gamma radiation dose rate},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={26},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2013},
title={Response of pMOS dosemeters on gamma-ray irradiation during its re-use},
journal={RADIATION PROTECTION DOSIMETRY},
volume={155},
number={4},
pages={394-403},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B,Stankovic Koviljka Dj,Markovic Slavoljub A},
year={2012},
title={Successive Gamma-Ray Irradiation and Corresponding Post-Irradiation Annealing of Pmos Dosimeters},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={27},
number={4},
pages={341-345},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D,Jaksic Aleksandar B},
year={2012},
title={The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={45},
number={30},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2012},
title={Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature},
journal={SENSORS AND ACTUATORS A-PHYSICAL},
volume={174},
number={},
pages={85-90},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D,Kovacevic Milojko S,Jaksic Aleksandar B},
year={2011},
title={The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
volume={269},
number={23},
pages={2703-2708},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Milic M,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2011},
title={Radiation-sensitive Field Effect Transistor Response to Gamma-ray Irradiation},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={26},
number={1},
pages={25-31},
document_type={Article},
} 

@ARTICLE{
author={Aleksic Sanja M,Jaksic Aleksandar B,Pejovic Momcilo M},
year={2008},
title={Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs},
journal={SOLID-STATE ELECTRONICS},
volume={52},
number={8},
pages={1197-1201},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2007},
title={Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress},
journal={JOURNAL OF NON-CRYSTALLINE SOLIDS},
volume={353},
number={2},
pages={170-179},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2006},
title={Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing},
journal={APPLIED SURFACE SCIENCE},
volume={252},
number={8},
pages={3023-3032},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2005},
title={Fowler-Nordheim high electric field stress of power VDMOSFETs},
journal={SOLID-STATE ELECTRONICS},
volume={49},
number={7},
pages={1140-1152},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2003},
title={Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs},
journal={APPLIED SURFACE SCIENCE},
volume={220},
number={1-4},
pages={181-185},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Ristic Goran S,Pejovic Momcilo M,Mohammadzadeh A,Sudre C,Lane W},
year={2002},
title={Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={49},
number={3},
pages={1356-1363},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Pejovic Momcilo M,Ristic Goran S},
year={2000},
title={Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments},
journal={APPLIED PHYSICS LETTERS},
volume={77},
number={25},
pages={4220-4222},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Pejovic Momcilo M,Ristic Goran S},
year={2000},
title={Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={47},
number={3},
pages={659-666},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Ristic Goran S,Pejovic Momcilo M},
year={2000},
title={New experimental evidence of latent interface-trap buildup in power VDMOSFETs},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={47},
number={3},
pages={580-586},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2000},
title={Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors},
journal={JOURNAL OF APPLIED PHYSICS},
volume={87},
number={7},
pages={3468-3477},
document_type={Article},
}