Jankovic Nebojsa D,Faramehr Soroush,Igic Petar (2022) A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT, JOURNAL OF COMPUTATIONAL ELECTRONICS, vol. 21, br. 1, str. 191-196 (Article) 

Faramehr Soroush,Jankovic Nebojsa D,Igic Petar (2019) Gan Current Transducers for Harsh Environments, 2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), vol. , br. , str. 1985-1988 (Proceedings Paper) 

Faramehr Soroush,Poluri Nagaditya,Igic Petar,Jankovic Nebojsa D,De Souza Maria Merlyne (2019) Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, br. 10, str. 4367-4372 (Article) 

Faramehr Soroush,Jankovic Nebojsa D,Igic Petar (2018) Analysis of GaN MagHEMTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 33, br. 9, str. - (Article) 

Igic Petar,Jankovic Nebojsa D,Evans Jon,Elwin Matthew,Batcup Stephen,Faramehr Soroush (2018) Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology, IEEE ELECTRON DEVICE LETTERS, vol. 39, br. 5, str. 746-748 (Article) 

Igic Petar,Kryvchenkova Olga,Faramehr Soroush,Batcup Steve,Jankovic Nebojsa D (2017) High Sensitivity Magnetic Sensors Compatible with Bulk Silicon and SOI IC Technology, 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), vol. , br. , str. 55-59 (Proceedings Paper) 

Jankovic Nebojsa D,Kryvchenkova Olga,Batcup Steve,Igic Petar (2017) High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology, IEEE ELECTRON DEVICE LETTERS, vol. 38, br. 6, str. 810-813 (Article) 

Jankovic Nebojsa D,Pantic Dragan S,Batcup Steve,Igic Petar (2012) A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate, APPLIED PHYSICS LETTERS, vol. 100, br. 26, str. - (Article) 

Jankovic Nebojsa D,Igic Petar,Sakurai Naoki (2010) Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations, SOLID-STATE ELECTRONICS, vol. 54, br. 3, str. 268-274 (Article) 

Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar (2009) An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor, INTERNATIONAL JOURNAL OF ELECTRONICS, vol. 96, br. 7, str. 767-779 (Article) 

Jankovic Nebojsa D,Ueta Takashi,Hamada Kimimori,Nishijima Toshifumi,Igic Petar (2007) Unified approach in electro-thermal modelling of IGBTs and power PiN diodes, PROCEEDINGS OF THE 19TH  INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, vol. , br. , str. 165-168 (Proceedings Paper) 

Jankovic Nebojsa D,Pesic Tatjana V,Igic Petar (2007) All injection level power PiN diode model including temperature dependence, SOLID-STATE ELECTRONICS, vol. 51, br. 5, str. 719-725 (Article) 

Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar (2006) An advance physics-based sub-circuit model of IGBT, 2006 IEEE International Symposium on Industrial Electronics, Vols 1-7, vol. , br. , str. 447-452 (Proceedings Paper)