@ARTICLE{
author={Jankovic Nebojsa D,Faramehr Soroush,Igic Petar},
year={2022},
title={A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT},
journal={JOURNAL OF COMPUTATIONAL ELECTRONICS},
volume={21},
number={1},
pages={191-196},
document_type={Article},
} 

@ARTICLE{
author={Faramehr Soroush,Jankovic Nebojsa D,Igic Petar},
year={2019},
title={Gan Current Transducers for Harsh Environments},
journal={2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)},
volume={},
number={},
pages={1985-1988},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Faramehr Soroush,Poluri Nagaditya,Igic Petar,Jankovic Nebojsa D,De Souza Maria Merlyne},
year={2019},
title={Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing},
journal={IEEE TRANSACTIONS ON ELECTRON DEVICES},
volume={66},
number={10},
pages={4367-4372},
document_type={Article},
} 

@ARTICLE{
author={Faramehr Soroush,Jankovic Nebojsa D,Igic Petar},
year={2018},
title={Analysis of GaN MagHEMTs},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={33},
number={9},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Igic Petar,Jankovic Nebojsa D,Evans Jon,Elwin Matthew,Batcup Stephen,Faramehr Soroush},
year={2018},
title={Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology},
journal={IEEE ELECTRON DEVICE LETTERS},
volume={39},
number={5},
pages={746-748},
document_type={Article},
} 

@ARTICLE{
author={Igic Petar,Kryvchenkova Olga,Faramehr Soroush,Batcup Steve,Jankovic Nebojsa D},
year={2017},
title={High Sensitivity Magnetic Sensors Compatible with Bulk Silicon and SOI IC Technology},
journal={2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL)},
volume={},
number={},
pages={55-59},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Kryvchenkova Olga,Batcup Steve,Igic Petar},
year={2017},
title={High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology},
journal={IEEE ELECTRON DEVICE LETTERS},
volume={38},
number={6},
pages={810-813},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pantic Dragan S,Batcup Steve,Igic Petar},
year={2012},
title={A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate},
journal={APPLIED PHYSICS LETTERS},
volume={100},
number={26},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Igic Petar,Sakurai Naoki},
year={2010},
title={Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations},
journal={SOLID-STATE ELECTRONICS},
volume={54},
number={3},
pages={268-274},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar},
year={2009},
title={An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor},
journal={INTERNATIONAL JOURNAL OF ELECTRONICS},
volume={96},
number={7},
pages={767-779},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Ueta Takashi,Hamada Kimimori,Nishijima Toshifumi,Igic Petar},
year={2007},
title={Unified approach in electro-thermal modelling of IGBTs and power PiN diodes},
journal={PROCEEDINGS OF THE 19TH  INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS},
volume={},
number={},
pages={165-168},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Igic Petar},
year={2007},
title={All injection level power PiN diode model including temperature dependence},
journal={SOLID-STATE ELECTRONICS},
volume={51},
number={5},
pages={719-725},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Zhou Zhongfu,Batcup Steve,Igic Petar},
year={2006},
title={An advance physics-based sub-circuit model of IGBT},
journal={2006 IEEE International Symposium on Industrial Electronics, Vols 1-7},
volume={},
number={},
pages={447-452},
document_type={Proceedings Paper},
}