Mitrovic Nikola I,Veljkovic Sandra,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Zivanovic Emilija N,Prijic Zoran D,Dankovic Danijel M (2022) Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications, MICROELECTRONICS RELIABILITY, vol. 138, br. , str. - (Article) 

Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stankovic Srboljub J,Andjelkovic Marko Lj,Prijic Zoran D,Manic Ivica Dj,Prijic Aneta P,Ristic Goran S,Dankovic Danijel M (2022) Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress, JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, vol. 31, br. 18, str. - (Article) 

Dankovic Danijel M,Davidovic Vojkan S,Golubovic Snezana M,Veljkovic Sandra,Mitrovic Nikola I,Djoric-Veljkovic Snezana M (2021) Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 126, br. , str. - (Article) 

Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stankovic Srboljub J,Prijic Aneta P,Prijic Zoran D,Manic Ivica Dj,Dankovic Danijel M (2018) NBTI and irradiation related degradation mechanisms in power VDMOS transistors, MICROELECTRONICS RELIABILITY, vol. 88-90, br. , str. 135-141 (Article; Proceedings Paper) 

Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Prijic Zoran D,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stojadinovic Ninoslav D (2018) A review of pulsed NBTI in P-channel power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 82, br. , str. 28-36 (Review) 

Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Prijic Aneta P,Stojadinovic Ninoslav D (2018) Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, br. 4, str. - (Article) 

Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D (2016) NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 63, br. 2, str. 1268-1275 (Article) 

Dankovic Danijel M,Stojadinovic Ninoslav D,Prijic Zoran D,Manic Ivica Dj,Davidovic Vojkan S,Prijic Aneta P,Djoric-Veljkovic Snezana M,Golubovic Snezana M (2015) Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET, CHINESE PHYSICS B, vol. 24, br. 10, str. - (Article) 

Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Stojadinovic Ninoslav D,Prijic Zoran D,Golubovic Snezana M (2015) Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 30, br. 10, str. - (Article) 

Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D (2015) Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, br. 6, str. - (Article) 

Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D (2013) The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet, NUCLEAR TECHNOLOGY & RADIATION PROTECTION, vol. 28, br. 4, str. 406-414 (Article) 

Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D (2013) Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs, INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, vol. 43, br. 1, str. 58-66 (Article) 

Manic Ivica Dj,Dankovic Danijel M,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D (2011) NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions, MICROELECTRONICS RELIABILITY, vol. 51, br. 9-11, str. 1540-1543 (Article) 

Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D (2011) Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets, NUCLEAR TECHNOLOGY & RADIATION PROTECTION, vol. 26, br. 1, str. 18-24 (Article) 

Davidovic Vojkan S,Stojadinovic Ninoslav D,Dankovic Danijel M,Golubovic Snezana M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Dimitrijev Sima (2008) Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, br. 8, str. 6272-6276 (Article) 

Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D (2008) Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs, IET CIRCUITS DEVICES & SYSTEMS, vol. 2, br. 2, str. 213-221 (Article) 

Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Stojadinovic Ninoslav D (2007) Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 47, br. 9-11, str. 1400-1405 (Article) 

Dankovic Danijel M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D (2006) NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 46, br. 9-11, str. 1828-1833 (Article) 

Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima (2006) Electrical stressing effects in commercial power VDMOSFETs, IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, vol. 153, br. 3, str. 281-288 (Article) 

Stojadinovic Ninoslav D,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Manic Ivica Dj,Golubovic Snezana M (2005) Negative bias temperature instability mechanisms in p-channel power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 45, br. 9-11, str. 1343-1348 (Article) 

Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima (2005) Effects of electrical stressing in power VDMOSFETS, MICROELECTRONICS RELIABILITY, vol. 45, br. 1, str. 115-122 (Article) 

Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D (2003) Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 43, br. 9-11, str. 1455-1460 (Article) 

Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M (2002) Effects of burn-in stressing on radiation response of power VDMOSFETs, MICROELECTRONICS JOURNAL, vol. 33, br. 11, str. 899-905 (Article) 

Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Dimitrijev Sima (2002) Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 42, br. 9-11, str. 1465-1468 (Article) 

Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Dimitrijev Sima (2002) Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 42, br. 4-5, str. 669-677 (Article) 

Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M (2002) Radiation hardening of power MOSFETs using electrical stress, ELECTRONICS LETTERS, vol. 38, br. 9, str. 431-432 (Article) 

Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Dimitrijev Sima (2001) Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs, MICROELECTRONICS RELIABILITY, vol. 41, br. 9-10, str. 1373-1378 (Article)