@ARTICLE{
author={Mitrovic Nikola I,Veljkovic Sandra,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Zivanovic Emilija N,Prijic Zoran D,Dankovic Danijel M},
year={2022},
title={Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications},
journal={MICROELECTRONICS RELIABILITY},
volume={138},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stankovic Srboljub J,Andjelkovic Marko Lj,Prijic Zoran D,Manic Ivica Dj,Prijic Aneta P,Ristic Goran S,Dankovic Danijel M},
year={2022},
title={Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={31},
number={18},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Davidovic Vojkan S,Golubovic Snezana M,Veljkovic Sandra,Mitrovic Nikola I,Djoric-Veljkovic Snezana M},
year={2021},
title={Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={126},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stankovic Srboljub J,Prijic Aneta P,Prijic Zoran D,Manic Ivica Dj,Dankovic Danijel M},
year={2018},
title={NBTI and irradiation related degradation mechanisms in power VDMOS transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={88-90},
number={},
pages={135-141},
document_type={Article; Proceedings Paper},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Prijic Zoran D,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stojadinovic Ninoslav D},
year={2018},
title={A review of pulsed NBTI in P-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={82},
number={},
pages={28-36},
document_type={Review},
} 

@ARTICLE{
author={Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Prijic Aneta P,Stojadinovic Ninoslav D},
year={2018},
title={Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={57},
number={4},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Stojadinovic Ninoslav D,Prijic Zoran D,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Prijic Aneta P,Paskaleva Albena,Spassov Dencho,Golubovic Snezana M},
year={2017},
title={Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs},
journal={2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL)},
volume={},
number={},
pages={147-151},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Davidovic Vojkan S,Paskaleva Albena,Spassov Dencho,Guziewicz Elzbieta,Krajewski T,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Dankovic Danijel M,Stojadinovic Ninoslav D},
year={2017},
title={Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks},
journal={2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL)},
volume={},
number={},
pages={143-146},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2016},
title={NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={63},
number={2},
pages={1268-1275},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Stojadinovic Ninoslav D,Prijic Zoran D,Manic Ivica Dj,Davidovic Vojkan S,Prijic Aneta P,Djoric-Veljkovic Snezana M,Golubovic Snezana M},
year={2015},
title={Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET},
journal={CHINESE PHYSICS B},
volume={24},
number={10},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Stojadinovic Ninoslav D,Prijic Zoran D,Golubovic Snezana M},
year={2015},
title={Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={30},
number={10},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2015},
title={Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={54},
number={6},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Manic Ivica Dj,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2014},
title={Recovery Treatment Effects on Gamma Radiation Response in Electrically Stressed Power VDMOS Transistors},
journal={2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014},
volume={},
number={},
pages={293-296},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2013},
title={The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={28},
number={4},
pages={406-414},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2013},
title={Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={43},
number={1},
pages={58-66},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Dankovic Danijel M,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2011},
title={NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions},
journal={MICROELECTRONICS RELIABILITY},
volume={51},
number={9-11},
pages={1540-1543},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2011},
title={Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={26},
number={1},
pages={18-24},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D},
year={2010},
title={Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress},
journal={MICROELECTRONICS RELIABILITY},
volume={50},
number={9-11},
pages={1278-1282},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Manic Ivica Dj,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2009},
title={Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={49},
number={9-11},
pages={1003-1007},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2008},
title={Negative bias temperature instability in n-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={48},
number={8-9},
pages={1313-1317},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Davidovic Vojkan S,Stojadinovic Ninoslav D,Dankovic Danijel M,Golubovic Snezana M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Dimitrijev Sima},
year={2008},
title={Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={47},
number={8},
pages={6272-6276},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2008},
title={New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs},
journal={2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS},
volume={},
number={},
pages={599-602},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2008},
title={Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs},
journal={IET CIRCUITS DEVICES & SYSTEMS},
volume={2},
number={2},
pages={213-221},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M},
year={2007},
title={Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs},
journal={TELSIKS 2007: 8TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, VOLS 1 AND 2},
volume={},
number={},
pages={275-282},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2007},
title={Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={47},
number={9-11},
pages={1400-1405},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2006},
title={NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={46},
number={9-11},
pages={1828-1833},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2006},
title={Electrical stressing effects in commercial power VDMOSFETs},
journal={IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS},
volume={153},
number={3},
pages={281-288},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2006},
title={Lifetime estimation in NBT stressed P-channel power VDMOSFETs},
journal={2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings},
volume={},
number={},
pages={645-648},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2006},
title={Spontaneous recovery in DC gate bias stressed power VDMOSFETs},
journal={2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings},
volume={},
number={},
pages={639-644},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Manic Ivica Dj,Golubovic Snezana M},
year={2005},
title={Negative bias temperature instability mechanisms in p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={45},
number={9-11},
pages={1343-1348},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2005},
title={Effects of electrical stressing in power VDMOSFETS},
journal={MICROELECTRONICS RELIABILITY},
volume={45},
number={1},
pages={115-122},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2004},
title={Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs},
journal={2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND  2},
volume={},
number={},
pages={701-704},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2003},
title={Effects of electrical stressing in power VDMOSFETs},
journal={2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS},
volume={},
number={},
pages={291-296},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2003},
title={Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={43},
number={9-11},
pages={1455-1460},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M},
year={2002},
title={Effects of burn-in stressing on radiation response of power VDMOSFETs},
journal={MICROELECTRONICS JOURNAL},
volume={33},
number={11},
pages={899-905},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Dimitrijev Sima},
year={2002},
title={Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={42},
number={9-11},
pages={1465-1468},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Dimitrijev Sima},
year={2002},
title={Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={42},
number={4-5},
pages={669-677},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M},
year={2002},
title={Effects of positive gate bias stress on radiation response in power VDMOSFETs},
journal={2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS},
volume={},
number={},
pages={723-726},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Dimitrijev Sima},
year={2002},
title={Spontaneous recovery of positive gate bias stressed power VDMOSFETs},
journal={2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS},
volume={},
number={},
pages={717-721},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M},
year={2002},
title={Radiation hardening of power MOSFETs using electrical stress},
journal={ELECTRONICS LETTERS},
volume={38},
number={9},
pages={431-432},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Manic Ivica Dj,Golubovic Snezana M},
year={2001},
title={Gamma-irradiation effects in power MOSFETs for application in communication satellites},
journal={TELSIKS 2001, VOL 1 & 2, PROCEEDINGS},
volume={},
number={},
pages={395-400},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Dimitrijev Sima},
year={2001},
title={Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={41},
number={9-10},
pages={1373-1378},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M},
year={2001},
title={Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs},
journal={PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS},
volume={},
number={},
pages={243-248},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Davidovic Vojkan S},
year={2001},
title={Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors <font color='#0066ff'><strong>(Erratum - errors in Authors - vol 38, pg 4699, 1999)</strong></font>},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS},
volume={40},
number={3A},
pages={1530-1530},
document_type={Correction},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2000},
title={Radiation effects in low-temperature stressed power VDMOS transistors},
journal={2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS},
volume={},
number={},
pages={337-340},
document_type={Proceedings Paper},
}