@ARTICLE{
author={Jankovic Nebojsa D,Faramehr Soroush,Igic Petar},
year={2022},
title={A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT},
journal={JOURNAL OF COMPUTATIONAL ELECTRONICS},
volume={21},
number={1},
pages={191-196},
document_type={Article},
} 

@ARTICLE{
author={Faramehr Soroush,Jankovic Nebojsa D,Igic Petar},
year={2019},
title={Gan Current Transducers for Harsh Environments},
journal={2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)},
volume={},
number={},
pages={1985-1988},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Faramehr Soroush,Poluri Nagaditya,Igic Petar,Jankovic Nebojsa D,De Souza Maria Merlyne},
year={2019},
title={Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing},
journal={IEEE TRANSACTIONS ON ELECTRON DEVICES},
volume={66},
number={10},
pages={4367-4372},
document_type={Article},
} 

@ARTICLE{
author={Faramehr Soroush,Jankovic Nebojsa D,Igic Petar},
year={2018},
title={Analysis of GaN MagHEMTs},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={33},
number={9},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Igic Petar,Jankovic Nebojsa D,Evans Jon,Elwin Matthew,Batcup Stephen,Faramehr Soroush},
year={2018},
title={Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology},
journal={IEEE ELECTRON DEVICE LETTERS},
volume={39},
number={5},
pages={746-748},
document_type={Article},
} 

@ARTICLE{
author={Igic Petar,Kryvchenkova Olga,Faramehr Soroush,Batcup Steve,Jankovic Nebojsa D},
year={2017},
title={High Sensitivity Magnetic Sensors Compatible with Bulk Silicon and SOI IC Technology},
journal={2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL)},
volume={},
number={},
pages={55-59},
document_type={Proceedings Paper},
}