@ARTICLE{
author={Andjelkovic Marko,Simevski Aleksandar,Chen Junchao,Schrape Oliver,Stamenkovic Zoran,Krstic Milos D,Ilic Stefan D,Ristic Goran S,Jaksic Aleksandar B,Vasovic Nikola,Duane Russell,Palma Alberto J,Lallena Antonio M,Carvajal Miguel Angel},
year={2022},
title={A Design Concept for Radiation Hardened RADFET Readout System for Space Applications},
journal={MICROPROCESSORS AND MICROSYSTEMS},
volume={90},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Lalena Antonio M,Krstic Milos D,Jaksic Aleksandar B},
year={2022},
title={Sensitivity and fading of irradiated RADFETs with different gate voltages},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT},
volume={1029},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Sarajlic Milija J,Stankovic Srboljub J,Ristic Goran S},
year={2021},
title={Recharging process of commercial floating-gate MOS transistor in dosimetry application},
journal={MICROELECTRONICS RELIABILITY},
volume={126},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Duane Russell,Andjelkovic Marko S,Palma Alberto J,Lallena Antonio M,Krstic Milos D,Stankovic Srboljub J,Jaksic Aleksandar B},
year={2021},
title={Radiation sensitive MOSFETs irradiated with various positive gate biases},
journal={JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES},
volume={14},
number={1},
pages={353-357},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Jaksic Aleksandar B},
year={2021},
title={Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm},
journal={SENSORS AND MATERIALS},
volume={33},
number={6},
pages={2109-2116},
document_type={Article},
}