@ARTICLE{
author={Veljkovic Sandra,Mitrovic N,Davidovic Vojkan S,Paskaleva Albena,Spassov Dencho,Marjanovic M,Zivanovic Emilija N,Ristic Goran S,Dankovic Danijel M},
year={2026},
title={Influence of controlling signal parameters and prior stresses on the self-heating of VDMOS power transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={181},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Zivanovic Emilija N,Veselinovic Nevena,Djordjevic Dunja,Petrovic Marija,Tasic Lana,Marjanovic Milos B,Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Ristic Goran S},
year={2025},
title={Examination of Impact of NBTIs on Commercial Power P-Channel VDMOS Transistors in Practical Applications},
journal={MICROMACHINES},
volume={17},
number={1},
pages={-},
document_type={Review},
} 

@ARTICLE{
author={Marjanovic Milos B,Ilic Stefan D,Veljkovic Sandra,Mitrovic Nikola I,Gurer Umutcan,Yilmaz Ozan,Kahraman Aysegul,Aktag Aliekber,Karacali Huseyin,Budak Erhan,Dankovic Danijel M,Ristic Goran S,Yilmaz Ercan},
year={2025},
title={The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer},
journal={SENSORS},
volume={25},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Zivanovic Emilija N,Davidovic Vojkan S,Veljkovic Sandra,Mitrovic Nikola I,Ristic Goran S,Paskaleva Albena,Spassov Dencho,Dankovic Danijel M},
year={2025},
title={Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors},
journal={MICROMACHINES},
volume={16},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Zivanovic Emilija N,Ristic Goran S,Dankovic Danijel M},
year={2024},
title={Successive Irradiation and Bias Temperature Stress Induced Effects on Commercial P-Channel Power Vdmos Transistors},
journal={FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS},
volume={37},
number={4},
pages={561-579},
document_type={Article},
} 

@ARTICLE{
author={Mitrovic Nikola I,Guirado Damian,Dankovic Danijel M,Palma Alberto J,Ristic Goran S,Carvajal Miguel A},
year={2024},
title={Thermal Annealing-Induced Recovery of the VT of Irradiated Commercial MOS Transistors},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={},
number={},
pages={-},
document_type={Article; Early Access},
} 

@ARTICLE{
author={Djordjevic Milos D,Paunovic Vesna V,Dankovic Danijel M},
year={2024},
title={A Method for Automatic Characterization and Measurement of Ceramic Materials Using Virtual Instrumentation},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={},
number={},
pages={-},
document_type={Article; Early Access},
} 

@ARTICLE{
author={Zivanovic Emilija N,Veljkovic Sandra,Mitrovic Nikola I,Jovanovic Igor D,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Dankovic Danijel M},
year={2024},
title={A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress},
journal={MICROMACHINES},
volume={15},
number={4},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Veljkovic Sandra,Mitrovic Nikola I,Jovanovic Igor D,Zivanovic Emilija N,Paskaleva Albena,Spassov Dencho,Mancic Dragan D,Dankovic Danijel M},
year={2023},
title={Self-heating of stressed VDMOS devices under specific operating conditions},
journal={MICROELECTRONICS RELIABILITY},
volume={150},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Mitrovic Nikola I,Djordjevic Milan,Veljkovic Sandra,Dankovic Danijel M},
year={2023},
title={Implementation and Testing of Websocket Protocol in Esp32 Based Iot Systems},
journal={FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS},
volume={36},
number={2},
pages={267-284},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Marjanovic Milos B,Mitrovic Nikola I,Zivanovic Emilija N,Dankovic Milan,Prijic Aneta P,Prijic Zoran D},
year={2023},
title={The Importance of Students' Practical Work in High Schools for Higher Education in Electronic Engineering},
journal={IEEE TRANSACTIONS ON EDUCATION},
volume={66},
number={2},
pages={146-155},
document_type={Article},
} 

@ARTICLE{
author={Marjanovic Milos B,Stojkovic Aleksandra S,Prijic Aneta P,Dankovic Danijel M,Prijic Zoran D},
year={2022},
title={Spatial Spice Model of a Wireless Al Spice Model of a Wire Sensor Network Node Based on R Network Node Based},
journal={FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS},
volume={35},
number={4},
pages={513-539},
document_type={Article},
} 

@ARTICLE{
author={Mitrovic Nikola I,Veljkovic Sandra,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Zivanovic Emilija N,Prijic Zoran D,Dankovic Danijel M},
year={2022},
title={Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications},
journal={MICROELECTRONICS RELIABILITY},
volume={138},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stankovic Srboljub J,Andjelkovic Marko Lj,Prijic Zoran D,Manic Ivica Dj,Prijic Aneta P,Ristic Goran S,Dankovic Danijel M},
year={2022},
title={Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={31},
number={18},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Davidovic Vojkan S,Golubovic Snezana M,Veljkovic Sandra,Mitrovic Nikola I,Djoric-Veljkovic Snezana M},
year={2021},
title={Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={126},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Mitrovic Nikola I,Dankovic Danijel M,Randjelovic Branislav M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2020},
title={Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={50},
number={3},
pages={205-214},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Djordjevic Milos D},
year={2020},
title={A Review of Real Time Smart Systems Developed at University of Nis},
journal={FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS},
volume={33},
number={4},
pages={669-686},
document_type={Review},
} 

@ARTICLE{
author={Djordjevic Milos D,Jovicic Branislav,Markovic Stefan,Paunovic Vesna V,Dankovic Danijel M},
year={2020},
title={A smart data logger system based on sensor and Internet of Things technology as part of the smart faculty},
journal={JOURNAL OF AMBIENT INTELLIGENCE AND SMART ENVIRONMENTS},
volume={12},
number={4},
pages={359-373},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Mitrovic Nikola I,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2020},
title={Modeling of NBTS Effects in P-Channel Power VDMOSFETs},
journal={IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY},
volume={20},
number={1},
pages={204-213},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stankovic Srboljub J,Prijic Aneta P,Prijic Zoran D,Manic Ivica Dj,Dankovic Danijel M},
year={2018},
title={NBTI and irradiation related degradation mechanisms in power VDMOS transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={88-90},
number={},
pages={135-141},
document_type={Article; Proceedings Paper},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Prijic Zoran D,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stojadinovic Ninoslav D},
year={2018},
title={A review of pulsed NBTI in P-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={82},
number={},
pages={28-36},
document_type={Review},
} 

@ARTICLE{
author={Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Prijic Aneta P,Stojadinovic Ninoslav D},
year={2018},
title={Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={57},
number={4},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Prijic Aneta P,Marjanovic Milos B,Ilic Aleksandar,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2016},
title={On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs},
journal={IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY},
volume={16},
number={4},
pages={522-531},
document_type={Article},
} 

@ARTICLE{
author={Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2016},
title={NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={63},
number={2},
pages={1268-1275},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Stojadinovic Ninoslav D,Prijic Zoran D,Manic Ivica Dj,Davidovic Vojkan S,Prijic Aneta P,Djoric-Veljkovic Snezana M,Golubovic Snezana M},
year={2015},
title={Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET},
journal={CHINESE PHYSICS B},
volume={24},
number={10},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Stojadinovic Ninoslav D,Prijic Zoran D,Golubovic Snezana M},
year={2015},
title={Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={30},
number={10},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2015},
title={Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={54},
number={6},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Dankovic Danijel M,Prijic Aneta P,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2014},
title={Measurement of NBTI Degradation in p-channel Power VDMOSFETs},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={44},
number={4},
pages={280-287},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2013},
title={The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={28},
number={4},
pages={406-414},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Vracar Ljubomir M,Prijic Aneta P,Prijic Zoran D},
year={2013},
title={An Electromechanical Approach to a Printed Circuit Board Design Course},
journal={IEEE TRANSACTIONS ON EDUCATION},
volume={56},
number={4},
pages={470-477},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2013},
title={Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={43},
number={1},
pages={58-66},
document_type={Article},
} 

@ARTICLE{
author={Prijic Aneta P,Dankovic Danijel M,Vracar Ljubomir M,Manic Ivica Dj,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2012},
title={A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={23},
number={8},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Dankovic Danijel M,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2011},
title={NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions},
journal={MICROELECTRONICS RELIABILITY},
volume={51},
number={9-11},
pages={1540-1543},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2011},
title={Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={26},
number={1},
pages={18-24},
document_type={Article},
} 

@ARTICLE{
author={Davidovic Vojkan S,Stojadinovic Ninoslav D,Dankovic Danijel M,Golubovic Snezana M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Dimitrijev Sima},
year={2008},
title={Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={47},
number={8},
pages={6272-6276},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2008},
title={Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs},
journal={IET CIRCUITS DEVICES & SYSTEMS},
volume={2},
number={2},
pages={213-221},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2007},
title={Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={47},
number={9-11},
pages={1400-1405},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2006},
title={NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={46},
number={9-11},
pages={1828-1833},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2006},
title={Electrical stressing effects in commercial power VDMOSFETs},
journal={IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS},
volume={153},
number={3},
pages={281-288},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Manic Ivica Dj,Golubovic Snezana M},
year={2005},
title={Negative bias temperature instability mechanisms in p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={45},
number={9-11},
pages={1343-1348},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2005},
title={Effects of electrical stressing in power VDMOSFETS},
journal={MICROELECTRONICS RELIABILITY},
volume={45},
number={1},
pages={115-122},
document_type={Article},
} 

@ARTICLE{
author={Kalagasidis-Krusic Melina T,Dankovic Danijel M,Nikolic M,Filipovic Jovanka M},
year={2004},
title={Poly(acrylamide-co-itaconic acid) and semi-IPNS with poly(ethylene glycol): Preparation and characterization},
journal={MACROMOLECULAR CHEMISTRY AND PHYSICS},
volume={205},
number={16},
pages={2214-2220},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Dimitrijev Sima},
year={2002},
title={Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={42},
number={9-11},
pages={1465-1468},
document_type={Article},
}