@ARTICLE{
author={Cheng Shuhao,Tang Xiaoqiang,Marinkovic Zlatica D,Crupi Giovanni,Cai Jialin},
year={2024},
title={Incorporating DC bias voltage in poly-harmonic distortion modeling for RF power GaN transistors},
journal={INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS},
volume={37},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Crupi Giovanni,Latino Mariangela,Gugliandolo Giovanni,Marinkovic Zlatica D,Cai Jialin,Fazio Enza,Donato Nicola},
year={2023},
title={GaN HEMT Modeling versus Bias Point and Gate Width},
journal={2023 58TH INTERNATIONAL SCIENTIFIC CONFERENCE ON INFORMATION, COMMUNICATION AND ENERGY SYSTEMS AND TECHNOLOGIES, ICEST},
volume={},
number={},
pages={211-214},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Crupi Giovanni,Latino Mariangela,Gugliandolo Giovanni,Marinkovic Zlatica D,Cai Jialin,Bosi Gianni,Raffo Antonio,Fazio Enza,Donato Nicola},
year={2023},
title={A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)},
journal={ELECTRONICS},
volume={12},
number={8},
pages={-},
document_type={Article},
}