@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Lalena Antonio M,Krstic Milos D,Jaksic Aleksandar B},
year={2022},
title={Sensitivity and fading of irradiated RADFETs with different gate voltages},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT},
volume={1029},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Veljkovic Sandra,Jevtic Aleksandar S,Dimitrijevic Strahinja D,Palma Alberto J,Stankovic Srboljub J,Andjelkovic Marko S},
year={2022},
title={Commercial P-Channel Power VDMOSFET as X-ray Dosimeter},
journal={ELECTRONICS},
volume={11},
number={6},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Sarajlic Milija J,Stankovic Srboljub J,Ristic Goran S},
year={2021},
title={Recharging process of commercial floating-gate MOS transistor in dosimetry application},
journal={MICROELECTRONICS RELIABILITY},
volume={126},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Duane Russell,Andjelkovic Marko S,Palma Alberto J,Lallena Antonio M,Krstic Milos D,Stankovic Srboljub J,Jaksic Aleksandar B},
year={2021},
title={Radiation sensitive MOSFETs irradiated with various positive gate biases},
journal={JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES},
volume={14},
number={1},
pages={353-357},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Jaksic Aleksandar B},
year={2021},
title={Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm},
journal={SENSORS AND MATERIALS},
volume={33},
number={6},
pages={2109-2116},
document_type={Article},
} 

@ARTICLE{
author={Affolder A,Andjelkovic Marko S,...,(broj koautora 55)},
year={2016},
title={Charge collection studies in irradiated HV-CMOS particle detectors},
journal={JOURNAL OF INSTRUMENTATION},
volume={11},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Savovic Svetislav M},
year={2016},
title={The isochronal annealing of irradiated n-channel power VDMOSFETs},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
volume={366},
number={},
pages={171-178},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Petrovic Vladimir,Stamenkovic Zoran,Ristic Goran S,Jovanovic Goran S},
year={2015},
title={Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch},
journal={JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS},
volume={31},
number={3},
pages={275-289},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Jaksic Aleksandar B},
year={2015},
title={The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses},
journal={APPLIED RADIATION AND ISOTOPES},
volume={102},
number={},
pages={29-34},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S},
year={2015},
title={Current mode response of phototransistors to gamma radiation},
journal={RADIATION MEASUREMENTS},
volume={75},
number={},
pages={29-38},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S,Jaksic Aleksandar B},
year={2015},
title={Using RADFET for the real-time measurement of gamma radiation dose rate},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={26},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S},
year={2013},
title={Feasibility Study of a Current Mode Gamma Radiation Dosimeter Based on a Commercial Pin Photodiode and a Custom Made Auto-Ranging Electrometer},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={28},
number={1},
pages={73-83},
document_type={Article},
}