@ARTICLE{
author={Alkoash Abed Alkhem,Sasic Rajko M,Lukic Petar M,Ostojic Stanko M},
year={2014},
title={4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis},
journal={PHYSICA SCRIPTA},
volume={89},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Abood Imhimmad,Lukic Petar M,Sasic Rajko M,Alkoash Abed Alkhem,Ostojic Stanko M},
year={2013},
title={4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance},
journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS},
volume={7},
number={5-6},
pages={329-333},
document_type={Article},
}