@ARTICLE{
author={Ostojic Stanko M,Sasic Rajko M,Lukic Petar M,Abood Imhimmad},
year={2014},
title={Surrounding gate long channel nanowire MOSFET modelling-extended analysis},
journal={PHYSICA SCRIPTA},
volume={89},
number={11},
pages={-},
document_type={Article; Proceedings Paper},
} 

@ARTICLE{
author={Abood Imhimmad,Sasic Rajko M,Ostojic Stanko M,Lukic Petar M},
year={2013},
title={Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={52},
number={9},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Abood Imhimmad,Lukic Petar M,Sasic Rajko M,Alkoash Abed Alkhem,Ostojic Stanko M},
year={2013},
title={4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance},
journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS},
volume={7},
number={5-6},
pages={329-333},
document_type={Article},
}